Bi2O2Se：半导体器件的后起之秀
Matter
(
IF
17.5
)
Pub Date : 2022-12-07
, DOI:
10.1016/j.matt.2022.11.005
Xiang Ding
1
,
Menglu Li
,
Pei Chen
,
Yan Zhao
,
Mei Zhao
,
Huaqian Leng
,
Yong Wang
,
Sharafat Ali
,
Fazal Raziq
,
Xiaoqiang Wu
,
Haiyan Xiao
,
Xiaotao Zu
,
Qingyuan Wang
,
Ajayan Vinu
,
Jiabao Yi
,
Liang Qiao
Affiliation
School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
硒化铋 (Bi 2 O 2 Se) 具有弱层间相互作用和独特的物理性质，成为新型准二维材料的后起之秀，具有高对称性、可调电子结构、超高电子迁移率、持久的量子振荡、独特的缺陷、强自旋轨道耦合、自然氧化层、出色的稳定性和惊人的光电性能。这些特性将有助于突破场效应晶体管和光电探测器等应用的现有技术壁垒。其独特的晶体结构和合适的晶格参数使其能够在晶格匹配（SrTiO 3和LaAlO 3）和非匹配（云母和SiO 2) 基板，在传统外延和新兴的范德瓦尔斯外延之间建立联系。本综述旨在从基本结构、物理和物理特性的角度概述这种有前途的半导体。我们特别关注电子结构与各种物理性质和材料性能的相关性。我们还确定了当前与这种材料的基本特性有关的问题和挑战。
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Bi2O2Se: A rising star for semiconductor devices
With weak interlayer interactions and unique physical properties, bismuth oxyselenide (Bi2O2Se) has become a rising star as a novel quasi-2D material, possessing high symmetry, adjustable electronic structure, ultra-high electron mobility, persistent quantum oscillations, unique defects, strong spin-orbital coupling, natural oxide layers, excellent stability, and marvelous optoelectronic performance. These characteristics will help to break through existing technical barriers for applications such as field-effect transistors and photodetectors. Its unique crystal structure and suitable lattice parameters allow it to grow on lattice-matched (SrTiO3 and LaAlO3) and unmatched (mica and SiO2) substrates, establishing a link between traditional epitaxy and emerging van der Waals epitaxy. This review aims to provide an overview of this promising semiconductor from a fundamental structure, physics, and physical properties perspective. We especially pay attention to the correlation of electronic structure to various physical properties and material performance. We also identify current problems and challenges regarding the fundamental properties of this material.
更新日期：2022-12-11